Infineon Technologies AGIPTC012N08NM5ATMA1MOSFETs

The OptiMOS™ power MOSFET IPTC012N08NM5ATMA1 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLT allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction. This new package in OptiMOS™ 5 - 60 V offers very low RDS(on) and is optimized to handle high current >300 A.

Thanks to the flexibility of gullwing leads, OptiMOS™ in TOLT package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board (TCoB) compared to the standard requirements (IPC-9701).

Among the key benefits, TOLT ensures high efficiency, lower EMI as well as high power density.

Features

• •  Optimized for motor drives and battery powered applications
• •  Optimized for top side cooling
• •  High current capability
• •  175° Crated
• •  100% avalanche tested
• •  Superior thermal performance
• •  N-channel
• •  Pb-free lead plating; RoHS compliant
• •  Halogen-free according to IEC61249-2-21

Benefits

• •  Increased system efficiency enabling extended battery life time
• •  High power density
• •  Superior thermal performance
• •  Saving in cooling system
• •  Minimized thermal resistance to heatsink

Target applications

• •  Power tools
• •  Light electric vehicles
• •  Battery Management systems

Related Products

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Additional Supporting Materials

Product brochure: OptiMOS™ power MOSFET in TOLx family
Whitepaper: New power MOSFET packaging - The TOLx family: TOLL, TOLG, TOLT
Product presentation TOLT: MOSFET OptiMOS™ TOLT