Infineon Technologies AGIPTG210N25NM3FDATMA1MOSFETs

The OptiMOS™ power MOSFET IPTG210N25NM3FDATMA1 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction. This new package in OptiMOS™ 5 - 60 V offers very low RDS(on) and is optimized to handle high current >300 A.

Thanks to the flexibility of gullwing leads, OptiMOS™ in TOLG package shows excellent solder joint reliability on Al-IMS board. This result in 2x higher thermal cycling on board (TCoB) compared to the standard requirements (IPC-9701).

Among the key benefits, TOLG ensures high efficiency, lower EMI as well as high power density.

Features

• •  Best in class technology
• •  High current rating >300 A
• •  Low ringing and voltage overshoot
• •  60 % space board reduction compared to D2PAK 7-pin
• •  Gullwing leads

Benefits

• •  High performance capability
• •  High system reliability
• •  High efficiency and lower EMI
• •  Optimized board utilization
• •  High thermal cycling on board performance

Target applications

• •  E-scooter
• •  Light electric vehicles
• •  Power tools
• •  Battery management system

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Additional Supporting Materials

Product brochure: OptiMOS™ power MOSFET in TOLx family
Whitepaper: New power MOSFET packaging - The TOLx family: TOLL, TOLG, TOLT
Product presentation TOLG: MOSFET OptiMOS™ TOLG