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VishaySI2305CDS-T1-GE3MOSFETs

Trans MOSFET P-CH 8V 5.8A 3-Pin SOT-23 T/R

In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI2305CDS-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 960 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.

Import TariffMay apply to this part

Totale in stock: 18.000 pezzi

Regional Inventory: 3.000

    Total$392.10Price for 3000

    3.000 in magazzino: Spedisce domani

    • (3000)

      Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2547+
      Manufacturer Lead Time:
      14 settimane
      Country Of origin:
      Germania
      • In Stock: 3.000 pezzi
      • Price: $0.1307
    • (3000)

      disponibili per la spedizione 2 domani

      Ships from:
      Paesi Bassi
      Date Code:
      2538+
      Manufacturer Lead Time:
      14 settimane
      Country Of origin:
      Stati Uniti d'America
      • In Stock: 15.000 pezzi
      • Price: $0.1201

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