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VishaySI2305CDS-T1-GE3MOSFETs

Trans MOSFET P-CH 8V 5.8A 3-Pin SOT-23 T/R

In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI2305CDS-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 960 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.

Import TariffMay apply to this part

Total In Stock: 18,000 parts

Regional Inventory: 3,000

    Total$392.10Price for 3000

    3,000 In stock: Ships tomorrow

    • (3000)

      Ships tomorrow

      Ships from:
      United States of America
      Date Code:
      2547+
      Manufacturer Lead Time:
      14 weeks
      Country Of origin:
      Germany
      • In Stock: 3,000 parts
      • Price: $0.1307
    • (3000)

      Ships in 2 days

      Ships from:
      Netherlands
      Date Code:
      2538+
      Manufacturer Lead Time:
      14 weeks
      Country Of origin:
      United States of America
      • In Stock: 15,000 parts
      • Price: $0.1201

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