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VishaySI2305CDS-T1-GE3MOSFET
Trans MOSFET P-CH 8V 5.8A 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 5.8 | |
| 100 | |
| 1 | |
| 35@4.5V | |
| 12@4.5V|20@8V | |
| 3.1 | |
| 1.5 | |
| 14 | |
| 960@4V | |
| 300@4V | |
| 0.4 | |
| 330 | |
| 960 | |
| 10 | |
| 20 | |
| 40 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 28@4.5V|39@2.5V|53@1.8V | |
| 960 | |
| 20 | |
| 130 | |
| 0.8 | |
| 1 | |
| 35 | |
| 1.2 | |
| 1 | |
| 10.2 | |
| 8 | |
| 4.4 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.92 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI2305CDS-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 960 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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