VishaySI2305CDS-T1-GE3MOSFETs

Trans MOSFET P-CH 8V 5.8A 3-Pin SOT-23 T/R

In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI2305CDS-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 960 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.

Import TariffMay apply to this part

Total en Stock: 12,000 piezas

Regional Inventory: 3,000

    Total$385.20Price for 3000

    3,000 en existencias: Se puede enviar mañana

    • (3000)

      Se puede enviar mañana

      Ships from:
      Estados Unidos de América
      Date Code:
      2547+
      Manufacturer Lead Time:
      14 semanas
      Country Of origin:
      Alemania
      • In Stock: 3,000 piezas
      • Price: $0.1284
    • (3000)

      Se puede enviar en 2 días

      Ships from:
      Países Bajos
      Date Code:
      2605+
      Manufacturer Lead Time:
      14 semanas
      • In Stock: 9,000 piezas
      • Price: $0.1193

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