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VishaySI2305CDS-T1-GE3MOSFETs

Trans MOSFET P-CH 8V 5.8A 3-Pin SOT-23 T/R

In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI2305CDS-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 960 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 ยฐC to 150 ยฐC. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.

Import TariffMay apply to this part

์ด ์žฌ๊ณ  ์ˆ˜๋Ÿ‰ : 18,000 ๋ถ€ํ’ˆ

Regional Inventory: 3,000

    Total$392.10Price for 3000

    3,000 ์žฌ๊ณ  ์žˆ์Œ: ๋‚ด์ผ ๋ฐฐ์†ก

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      ๋ฏธ๊ตญ
      Date Code:
      2547+
      Manufacturer Lead Time:
      14 ์ฃผ
      Country Of origin:
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      • In Stock: 3,000 ๋ถ€ํ’ˆ
      • Price: $0.1307
    • (3000)

      2 ์ผ ์ด๋‚ด ๋ฐฐ์†ก

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      ๋„ค๋œ๋ž€๋“œ
      Date Code:
      2538+
      Manufacturer Lead Time:
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      Country Of origin:
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      • In Stock: 15,000 ๋ถ€ํ’ˆ
      • Price: $0.1201

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