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VishaySI2305CDS-T1-GE3MOSFETs

Trans MOSFET P-CH 8V 5.8A 3-Pin SOT-23 T/R

In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI2305CDS-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 960 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.

Import TariffMay apply to this part

库存总量: 18,000 个零件

Regional Inventory: 3,000

    Total$392.10Price for 3000

    3,000 In stock: 可以明天配送

    • (3000)

      可以明天配送

      Ships from:
      美国
      Date Code:
      2547+
      Manufacturer Lead Time:
      14 星期
      Country Of origin:
      德国
      • In Stock: 3,000
      • Price: $0.1307
    • (3000)

      可以在 2 天内配送

      Ships from:
      荷兰
      Date Code:
      2538+
      Manufacturer Lead Time:
      14 星期
      Country Of origin:
      美国
      • In Stock: 15,000
      • Price: $0.1201

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