Infineon Technologies AG Diodi, transistor e tiristori
8.160 Infineon Technologies AG Diodi, transistor e tiristori
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| N. parte | Prezzo | Scorte | Produttore | Categoria | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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NUOVO!
IMZA65R040M2HXKSA1
Trans MOSFET N-CH SiC 650V 46A 4-Pin(4+Tab) TO-247 Tube
|
Scorte
240
$4.4459
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 23 | 172000 | 46 | 49@18V | 28@18V | 997@400V | Tube | 4 | TO-247 | TO | Yes | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AUIRFB4610
Trans MOSFET N-CH Si 100V 73A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101
|
Scorte
350
Da $1.0904 a $1.2129
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 190000 | 73 | 14@10V | 90@10V | 90 | 3550@50V | 11@10V | Tube | 3 | TO-220AB | TO | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKY120N120CH7XKSA1
Trans IGBT Chip N-CH 1200V 220A 780W 4-Pin(4+Tab) TO-247 Tube
|
Scorte
65
Da $6.602 a $8.466
Per unità
|
Infineon Technologies AG | IGBT Chip | N | Single | ±20 | 1200 | 220 | 780 | Tube | 4 | TO-247 | TO | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DD171N18KHPSA1
Diode 1.8KV 171A 3-Pin PB34-1 Tray
|
Scorte
1
$128.43
Per unità
|
Infineon Technologies AG | Rectifiers | Dual Series | 1800 | 171 | 6600 | 1.26@500A | 20000 | Tray | 3 | PB34-1 | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS16UE6327HTSA1
Diode Switching Si 85V 0.2A 6-Pin SC-74 T/R Automotive AEC-Q101
|
Scorte
5.747
Da $0.0753 a $0.0791
Per unità
|
Infineon Technologies AG | Rectifiers | Switching Diode | Si | Triple Parallel | 85 | 0.2 | 4.5 | 1.25@0.15A | 1@75V | 250 | 4 | Tape and Reel | 6 | SC-74 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Più cercati
IGW60T120FKSA1
Trans IGBT Chip N-CH 1200V 100A 375W 3-Pin(3+Tab) TO-247 Tube
|
Scorte
19
Da $4.107 a $4.422
Per unità
|
Infineon Technologies AG | IGBT Chip | N | Single | ±20 | 1200 | 100 | 375 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT65R190CFD7XTMA1
Trans MOSFET N-CH 700V 16A 9-Pin(8+Tab) HSOF T/R
|
Scorte
2.000
Da $0.5041 a $0.5555
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 700 | 20 | 106000 | 16 | 190@10V | 22@10V | 22 | 1044@400V | Tape and Reel | 9 | HSOF | SO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP843H6327XTSA1
Trans RF BJT NPN 2.25V 0.055A 125mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R
|
Scorte
3
$0.9681
Per unità
|
Infineon Technologies AG | RF BJT | NPN | Single Dual Emitter | 2.25 | 2.9 | 1 | 0.055 | 1.8V/15mA | 125 | 120 to 200 | 150@15mA@1.8V | 5.23 | 24.5 | 8.5(Typ) | 24 | 1.85 | Tape and Reel | 4 | SOT-343 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DD540N26KHPSA1
Diode 2.6KV 540A 3-Pin PB60-1 Tray
|
Scorte
2
$404.00
Per unità
|
Infineon Technologies AG | Rectifiers | Dual Series | 2600 | 540 | 16500 | 1.48@1700A | 40000 | Tray | 3 | PB60-1 | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12KE3BOSA1
Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray
|
Scorte
240
Da $120.9439 a $140.3851
Per unità
|
Infineon Technologies AG | moduli IGBT | N | Hex | ±20 | 1200 | 200 | 700 | Tray | 35 | ECONO3-4 | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Più cercati
BAR6405E6327HTSA1
Diode PIN Attenuator/Switch 150V 100mA Automotive AEC-Q101 3-Pin SOT-23 T/R
|
Scorte
1
$0.0236
Per unità
|
Infineon Technologies AG | PIN | Attenuator|Switch | HF|MF|SHF|UHF|VHF | Dual Common Cathode | 150 | 100 | 1.35@100mA | 1.1@50mA | 20@1mA | 250 | 0.35@20V | 1.55 | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R099CPAATMA1
Trans MOSFET N-CH 600V 31A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
Scorte
1.000
$3.5067
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | ±20 | 3.5 | 255000 | 31 | 105@10V | 60@10V | 0.5 | 60 | 2800@100V | 90@10V | Tape and Reel | 3 | D2PAK | TO | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC079N03LSCGATMA1
Trans MOSFET N-CH 34V 14A 8-Pin TDSON EP T/R
|
Scorte
4.000
Da $0.1974 a $0.2243
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 34 | ±20 | 50 | 2.2 | 2500 | 14 | 7.9@10V | 6.8@4.5V|14@10V | 14 | 1200@15V | 6.6@10V|10.2@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SMBD7000E6327HTSA1
Diode Switching Si 100V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Scorte
116.405
Da $0.097 a $0.0985
Per unità
|
Infineon Technologies AG | Rectifiers | Switching Diode | Si | Dual Series | 100 | 0.2 | 4.5 | 1.25@0.15A | 0.5 | 330 | 2 | 4 | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGP6630DPBF
Trans IGBT Chip N-CH 600V 47A 192W 3-Pin(3+Tab) TO-247AC Tube
|
Scorte
8
$0.6524
Per unità
|
Infineon Technologies AG | IGBT Chip | Trench Stop | N | Single | ±20 | 600 | 47 | 192 | Tube | 3 | TO-247AC | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Più cercati
BBY5502VH6327XTSA1
Varactor Diode Single 16V 17.5pF 2-Pin SC-79 T/R
|
Scorte
342.011
Da $0.1516 a $0.1523
Per unità
|
Infineon Technologies AG | Varactors | Tuner|VCO | Single | 16 | 0.003 | 0.02 | 2 | 2V/10V | 17.5@1V | Tape and Reel | 2 | SC-79 | No | No | Yes | Unknown | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS150R12N2T7B15BPSA1 Trans IGBT Module N-CH 1200V 150A 35-Pin ECONO2B Tray |
Scorte
9
$40.75
Per unità
|
Infineon Technologies AG | moduli IGBT | Trench Stop | N | Hex | ±20 | 1200 | 150 | Tray | 35 | ECONO2B | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Più cercati
BCR08PNH6327XTSA1
Trans Digital BJT NPN/PNP 50V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
|
Scorte
18.000
Da $0.117 a $0.307
Per unità
|
Infineon Technologies AG | BJT digitale | NPN|PNP | Dual | 50 | 0.1 | 2.2 | 0.047 | 250 | 70@5mA@5V | 0.3@0.5mA@10mA | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DDB6U50N16W1RPB11BPSA1 Trans IGBT Module N-CH 1200V 50A 26-Pin Tray |
Scorte
300
$8.695
Per unità
|
Infineon Technologies AG | moduli IGBT | N | Single | ±20 | 1200 | 50 | Tray | 26 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DDB6U50N16W1RBPSA1 Trans IGBT Module N-CH 1200V 50A 26-Pin Tray |
Scorte
240
$5.974
Per unità
|
Infineon Technologies AG | moduli IGBT | N | Single | ±20 | 1200 | 50 | Tray | 26 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
SMBD914E6327HTSA1
Diode Switching Si 100V 0.25A 3-Pin SOT-23 T/R Automotive AEC-Q101
|
Scorte
12.000
$0.0275
Per unità
|
Infineon Technologies AG | Rectifiers | Switching Diode | Single | 100 | 0.25 | 4.5 | 1.25@0.15A | 0.1@75V | 370 | 4 | Silicon | Tape and Reel | Unknown | 3 | SOT-23 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F3L50R06W1E3B11BOMA1
Trans IGBT Module N-CH 600V 75A 175W 14-Pin EASY1B-2 Tray
|
Scorte
12
$36.73
Per unità
|
Infineon Technologies AG | moduli IGBT | N | Quad | ±20 | 600 | 75 | 175 | Tray | 14 | EASY1B-2 | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA65R057M1HXKSA1
Trans MOSFET N-CH SiC 650V 35A 4-Pin(4+Tab) TO-247 Tube
|
Scorte
4
$6.791
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Dual Source | Enhancement | 1 | 650 | 23 | 133000 | 35 | 74@18V | 28@18V | 930@400V | Tube | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDK02G120C5XTMA1
Diode Schottky SiC 1.2KV 11.8A 3-Pin(2+Tab) D2PAK T/R
|
Scorte
162
Da $0.359 a $0.3773
Per unità
|
Infineon Technologies AG | Rectifiers | Schottky Diode | SiC | Single Dual Cathode | 1200 | 11.8 | 37 | 1.65@2A | 18 | 75000 | 182(Typ) | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU220NPBF
Trans MOSFET N-CH 200V 5A 3-Pin(3+Tab) IPAK Tube
|
Scorte
2.960
$0.2946
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 4 | 43000 | 5 | 600@10V | 15@10V | 15 | 300@25V | Tube | 3 | IPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes |