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Infineon Technologies AGIPD082N10N3GATMA1MOSFETs
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 80 | |
| 100 | |
| 1 | |
| 8.2@10V | |
| 42@10V | |
| 42 | |
| 2990@50V | |
| 125000 | |
| 8 | |
| 42 | |
| 31 | |
| 18 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.41(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPD082N10N3GATMA1 power MOSFET. Its maximum power dissipation is 125000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 3 technology.
| EDA / CAD Models |
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