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Infineon Technologies AGIPD082N10N3GATMA1MOSFET
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 80 | |
| 100 | |
| 1 | |
| 8.2@10V | |
| 42@10V | |
| 42 | |
| 2990@50V | |
| 125000 | |
| 8 | |
| 42 | |
| 31 | |
| 18 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.41(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPD082N10N3GATMA1 power MOSFET. Its maximum power dissipation is 125000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 3 technology.
| EDA / CAD Models |
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