Infineon Technologies AG Diodes, Transistors and Thyristors
8.160 Infineon Technologies AG Diodes, Transistors and Thyristors
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| N. parte | Prezzo | Scorte | Produttore | Categoria | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IRF7205TRPBF
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R
|
Scorte
12.001
$0.2285
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 3 | 4.6 | 70@10V | 27@10V | 50 | 27 | 2500 | 720 | 870@10V | Tape and Reel | 8 | SOIC N | SO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAW156E6327HTSA1
Diode Switching 85V 0.2A 3-Pin SOT-23 T/R Automotive AEC-Q101
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Scorte
30.000
$0.1767
Per unità
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Infineon Technologies AG | Rectifiers | Switching Diode | Dual Common Anode | 85 | 0.2 | 4.5 | 1.25@0.15A | 0.005@75V | 1500 | 250 | Tape and Reel | 3 | SOT-23 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGP6630DPBF
Trans IGBT Chip N-CH 600V 47A 192W 3-Pin(3+Tab) TO-247AC Tube
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Scorte
8
$0.5032
Per unità
|
Infineon Technologies AG | IGBT Chip | Trench Stop | N | Single | ±20 | 600 | 47 | 192 | Tube | 3 | TO-247AC | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6715MTRPBF
Trans MOSFET N-CH Si 25V 34A 7-Pin Direct-FET MX T/R
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Scorte
295
Da $1.735 a $2.247
Per unità
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Dual Source | Enhancement | 1 | 25 | ±20 | 2.4 | 34 | 1.6@10V | 40@4.5V | 2800 | 5340@13V | 1.3@10V|2.1@4.5V | Tape and Reel | 7 | Direct-FET MX | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1010ZSTRLPBF
Trans MOSFET N-CH Si 55V 94A 3-Pin(2+Tab) D2PAK T/R
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Scorte
2.978
Da $1.17 a $2.88
Per unità
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Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 94 | 7.5@10V | 63@10V | 63 | 140000 | 2840@25V | 5.8@10V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI4110GPBF
Trans MOSFET N-CH Si 100V 72A 3-Pin(3+Tab) TO-220FP Tube
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Scorte
3.773
Da $1.851 a $4.301
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 100 | ±20 | 4 | 72 | 4.5@10V | 190@10V | 190 | 61000 | 9540@50V | 3.7@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS150R12KT3BOSA1
Trans IGBT Module N-CH 1200V 200A 700W 35-Pin ECONO3-4 Tray
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Scorte
10
$167.02
Per unità
|
Infineon Technologies AG | moduli IGBT | N | Hex | ±20 | 1200 | 200 | 700 | Tray | 35 | ECONO3-4 | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R125CPXKSA1
Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220FP Tube
|
Scorte
742
$3.336
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±20 | 3.5 | 25 | 125@10V | 53@10V | 80 | 3.6 | 53 | 35000 | 2500@100V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD053N06NATMA1
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) DPAK T/R
|
Scorte
38.423
Da $0.5568 a $2.016
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 2.8(Typ) | 45 | 5.3@10V | 27@10V | 27 | 3000 | 2000@30V | 4.5@10V|6@6V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R045CPFKSA1
Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
|
Scorte
4.148
$9.4025
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±20 | 3.5 | 60 | 45@10V | 150@10V | 62 | 150 | 431000 | 6800@100V | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SMBT3904PNH6327XTSA1
Trans GP BJT NPN/PNP 40V 0.2A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
|
Scorte
26.848
Da $0.0433 a $0.066
Per unità
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Infineon Technologies AG | GP BJT | NPN|PNP | Bipolar Small Signal | Si | Dual | 40 | 2 | 40 | 6 | 0.85@1mA@10mA|0.95@5mA@50mA | 0.2 | 30 to 50|50 to 120 | 40@100uA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | 250 | 0.25@1mA@10mA|0.4@5mA@50mA | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS606NH6327XTSA1
Trans MOSFET N-CH 60V 3.2A 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
|
Scorte
23.000
Da $0.1311 a $0.1775
Per unità
|
Infineon Technologies AG | MOSFETs | Small Signal | N | Single Dual Drain | Enhancement | 1 | 60 | ±20 | 2.3 | 3.2 | 60@10V | 3.7@5V | 1000 | 494@25V | 47@10V|66@4.5V | Tape and Reel | 4 | SOT-89 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKQ120N60CTXKSA1
Trans IGBT Chip N-CH 600V 160A 833W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
|
Scorte
240
Da $13.00 a $17.20
Per unità
|
Infineon Technologies AG | IGBT Chip | N | Single | ±20 | 600 | 160 | 833 | Tube | 3 | TO-247 | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH04G65C6XKSA1
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220 Tube
|
Scorte
814
Da $0.863 a $2.49
Per unità
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Infineon Technologies AG | Rectifiers | Schottky Diode | SiC | Single | 650 | 12 | 29 | 1.35@4A | 14@420V | 205(Typ) | 45000 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLS3036TRLPBF
Trans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK T/R
|
Scorte
3.200
$1.4346
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±16 | 270 | 2.4@10V | 91@4.5V | 0.4 | 380000 | 11210@50V | 1.9@10V|2.2@4.5V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGT65R035D2ATMA1
Enhancement-Mode Power GaN Transistor
|
Scorte
1
$5.023
Per unità
|
Infineon Technologies AG | MOSFETs | 8 | HSOF EP | SO | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML0040TRPBF
Trans MOSFET N-CH 40V 3.6A 3-Pin SOT-23 T/R
|
Scorte
414.000
Da $0.0634 a $0.0863
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 40 | ±16 | 3.6 | 56@10V | 2.6@4.5V | 1300 | 266@25V | 44@10V|62@4.5V | HEXFET | Tape and Reel | 3 | SOT-23 | SOT | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGC033S10S1XTMA1
Trans MOSFET N-CH GaN 100V 21A 6-Pin TSON T/R
|
Scorte
42
Da $2.8315 a $4.1929
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | GaN | N | Single Dual Drain Triple Source | Enhancement | 1 | 100 | 5.5 | 21 | 3.3@5V | 11@5V | 3300 | 1200@50V | 6 | TSON | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFP840ESDH6327XTSA1
Trans RF BJT NPN 2.25V 0.035A 75mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-343 T/R
|
Scorte
2.880
Da $0.203 a $0.318
Per unità
|
Infineon Technologies AG | RF BJT | NPN | SiGe | Single Dual Emitter | 2.25 | 1 | 2.9 | 0.035 | 1.8V/10mA | 120 to 200 | 150@10mA@1.8V | 0.41 | 75 | 0.037 | 5(Typ) | 17 | 19.5 | 80000(Typ) | 1.45(Typ) | Tape and Reel | 4 | SOT-343 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB027N10N3GATMA1
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R
|
Scorte
15.393
Da $2.5618 a $5.3692
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 3.5 | 120 | 2.7@10V | 155@10V | 155 | 300000 | 11100@50V | 2.3@10V|2.8@6V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDP30E120XKSA1
Diode Switching 1.2KV 50A 2-Pin(2+Tab) TO-220 Tube
|
Scorte
27.045
Da $0.9218 a $2.6008
Per unità
|
Infineon Technologies AG | Rectifiers | Switching Diode | Single | 1200 | 50 | 102 | 2.15@30A | 100 | 243(Typ) | 138000 | Tube | 2 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPN65R1K5CEATMA1
Trans MOSFET N-CH 650V 5.2A 3-Pin SOT-223 T/R
|
Scorte
6.000
Da $0.1128 a $0.1142
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 3.5 | 5.2 | 1500@10V | 10.5@10V | 75 | 10.5 | 5000 | 225@100V | 1350@10V | Tape and Reel | 3 | SOT-223 | SOT | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPT012N08N5ATMA1
Trans MOSFET N-CH 80V 56A 9-Pin(8+Tab) HSOF T/R
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Scorte
1.006
Da $3.492 a $5.68
Per unità
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 80 | 20 | 3.8 | 56 | 1.2@10V | 178@10V | 62 | 0.4 | 178 | 375000 | 13000@40V | 1@10V|1.3@6V | Tape and Reel | 9 | HSOF | SO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ60T022S7AXTMA1
Trans MOSFET N-CH 600V 90A 22-Pin HDSOP EP T/R Automotive AEC-Q101
|
Scorte
10
Da $6.6969 a $3.959
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Gate Octal Source Eleven Drain | Enhancement | 1 | 600 | 20 | 90 | 22@12V | 150@12V | 416000 | 5640@300V | 22 | HDSOP EP | SO | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSR802NL6327HTSA1
Trans MOSFET N-CH 20V 3.7A 3-Pin SC-59 T/R Automotive AEC-Q101
|
Scorte
262
Da $0.273 a $0.428
Per unità
|
Infineon Technologies AG | MOSFETs | Small Signal | N | Single | Enhancement | 1 | 20 | ±8 | 3.7 | 23@2.5V | 4.7@2.5V | 500 | 1013@10V | Tape and Reel | 3 | SC-59 | SOT | No | Unknown | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |