Infineon Technologies AGIPB027N10N3GATMA1MOSFETs
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 120 | |
| 2.7@10V | |
| 155@10V | |
| 155 | |
| 11100@50V | |
| 300000 | |
| 28 | |
| 58 | |
| 84 | |
| 34 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.3@10V|2.8@6V | |
| 480 | |
| Mounting | Surface Mount |
| Package Height | 4.57(Max) mm |
| Package Width | 9.45(Max) mm |
| Package Length | 10.31(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB027N10N3GATMA1 power MOSFET. Its maximum power dissipation is 300000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.
| EDA / CAD Models |
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