Bourns® Silicon Carbide (SiC) Diodes provide excellent current carrying capacity. These advanced power components are suitable for applications such as converters requiring a high peak forward surge capability, low forward voltage drop, reduced thermal resistance and low power loss, resulting in high efficiency.
Bourns® Model BSD Series Silicon Carbide Schottky Barrier Diodes (SBDs) are designed to address the demands of modern high-frequency and high-current applications, offering advanced features to enhance power conversion solutions. Operating within a voltage range of 650 V to 1200 V and currents from 6 A to 10 A, Bourns® BSD models are versatile for various applications, including DC-DC and AC-DC converters, SMPS, photovoltaic inverters, motor drives, and rectification. With package options including TO220-2, TO247-3, TO252, and DFN8x8, the BSD Series offers flexibility to match your application's unique requirements. This adaptability enables designers to create compact, state-of-the-art power electronics while maintaining high performance.
Features
- Low power loss, high efficiency
- Low reverse leakage current
- High peak forward surge current (IFSM)
- Reduced EMI - No reverse recovery current
- Reduced heat dissipation - Low forward voltage (VF)
- Maximum operating temperature junction range (TJ) up to 175 °C
- Epoxy potting compound is flame retardant to the UL 94V-0 standard
- RoHS compliant*, Pb free and halogen free**
Applications
- Switched-Mode Power Supplies (SMPS)
- Power Factor Correction (PFC)
- Photovoltaic inverters
- DC-DC, AC-DC converters
- Telecommunications
- Motor drives
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