NXP Semiconductors Diodes, Transistors and Thyristors
1.135 NXP Semiconductors Diodes, Transistors and Thyristors
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| N. parte | Prezzo | Scorte | Produttore | Categoria | Type | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Regulator Current - (mA) | Maximum Gate Trigger Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Voltage Regulation - (mV) | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Peak On-State Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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AFT05MS004NT1
Trans RF MOSFET N-CH 30V 4-Pin(3+Tab) SOT-89A T/R
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Scorte
1.047
Da $1.914 a $2.109
Per unità
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NXP Semiconductors | RF MOSFETs | MOSFET | N | Single Dual Source | Enhancement | 1 | CW | 30 | 12 | 2.5 | 28000 | 57.6@7.5V | 136 | 4.9(Typ) | 20.9 | LDMOS | 4 | SOT-89A | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF300AN
Trans RF MOSFET N-CH 133V 3-Pin(3+Tab) TO-247 Tube
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Scorte
240
$59.9033
Per unità
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NXP Semiconductors | RF MOSFETs | MOSFET | N | Single | Enhancement | 1 | CW | 133 | 10 | 272000 | 403@50V | 1.8 | 330(Typ) | 28.2 | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Più cercati
BFU550XAR
Trans RF BJT NPN 16V 0.08A 450mW Automotive 4-Pin SOT-143B T/R
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$0.1821
Per unità
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NXP Semiconductors | RF BJT | NPN | Si | Single Dual Emitter | 16 | 1 | 30 | 3 | 0.08 | 8V/25mA | 50 to 120 | 60@15mA@8V | 1.11 | 450 | 0.72 | 13.5(Typ) | 26.5 | 23 | 11000(Typ) | 1.3(Min) | Tape and Reel | 4 | SOT-143B | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Più cercati
BB173X
Varactor Diode Single 35V 34.65pF 2-Pin SOD-523 T/R
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Da $0.1402 a $0.1693
Per unità
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NXP Semiconductors | Varactors | VCO | VHF | Single | 35 | 0.01 | 0.02 | 13.5 | 1V/28V | 34.65@1V | Tape and Reel | 2 | SOD-523 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Più cercati
BB201,215
Diode VAR Cap Dual Common Cathode 15V 89pF 3-Pin TO-236AB T/R
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NXP Semiconductors | Varactors | Tuner|VCO | Dual Common Cathode | 15 | 0.01 | 0.02 | 3.1 | 1V/7.5V | 89@1V | Tape and Reel | 3 | TO-236AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMRF5014H-500MHZ Trans RF MOSFET N-CH 125V 3-Pin NI-360H-2SB Each |
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NXP Semiconductors | RF MOSFETs | MOSFET | GaN | N | Single | Enhancement | 1 | Pulse | 125 | 0 | 2.3 | 232000 | 51@50V | 1 | 125(Typ) | 18 | Each | 3 | NI-360H-2SB | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRFE8VP8600HR5
Trans RF MOSFET N-CH 115V 5-Pin NI-1230H T/R
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$199.73
Per unità
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NXP Semiconductors | RF MOSFETs | N | Dual Common Source | Enhancement | 2 | OFDM | 115 | 10 | 2.3 | 1250000 | 452@50V | 470 | 140(Typ) | 21 | Tape and Reel | 5 | NI-1230H | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NZX5V6A,133
Zener Diode Single 5.35V 2% 40Ohm 500mW 2-Pin ALF Ammo
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NXP Semiconductors | Zener | Voltage Regulator | Single | 5.35 | 2% | 5 | 1 | 40 | 500 | 500 | Ammo | 2 | ALF | DO | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MRF6S27015GNR1
Trans RF MOSFET N-CH 68V 3-Pin TO-270 GULL T/R
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NXP Semiconductors | RF MOSFETs | N | Single | Enhancement | 1 | 1-Carrier W-CDMA|BWA|CDMA|OFDM|WIBRO|WIMAX | 68 | 12 | 2000 | 3(Typ) | 14 | Tape and Reel | 3 | TO-270 GULL | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZV55-B9V1,115
Diode Zener Single 9.1V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 9.1 | 2% | 5 | 0.9 | 0.5 | 15 | 150 | 500 | Tape and Reel | 2 | Mini-MELF | MELF | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MRF8VP13350NR5 Trans RF MOSFET N-CH 100V 5-Pin OM-780 EP T/R |
$242.48
Per unità
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NXP Semiconductors | RF MOSFETs | N | Enhancement | CW | 100 | 10 | 700 | 350 | 20.7 | 5 | OM-780 EP | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BUJ303A,127
Trans GP BJT NPN 500V 5A 100000mW 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | GP BJT | NPN | Bipolar Power | Si | Single | 500 | 1 | 1.3@0.6A@3A | 5 | 2 to 30 | 10@5mA@5V|14@500mA@5V | 100000 | 1.5@0.6A@3A | 700 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BZX84J-C24,115
Diode Zener Single 24V 5% 550mW 2-Pin SC-90 T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 24 | 5% | 5 | 1.1 | 0.05 | 30 | 550 | 80 | 550 | Tape and Reel | 2 | SC-90 | SOD | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1205C,115
Trans RF FET N-CH 6V 0.03A 6-Pin TSSOP T/R
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NXP Semiconductors | RF MOSFETs | N | Dual | Enhancement | 2 | 6 | 6 | 0.03 | 180 | 2.2@5V@Gate 1|3@5V@Gate 2@Amp A|2@5V@Gate 1|3.4@5V@Gate 2@Amp B | 35 | 2.1@Amp B|1.9@Amp A | Tape and Reel | 6 | TSSOP | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAP64-03,115
PIN Diode Attenuator/Switch 175V 100mA Automotive AEC-Q101 2-Pin SOD-323 T/R
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Da $0.072 a $0.0768
Per unità
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NXP Semiconductors | PIN | Attenuator|Switch | SHF | Single | 175 | 100 | 1.35@100mA | 1.1@50mA | 40@0.5mA | 10 | 0.35@20V | 1.55 | 500 | 2 | SOD-323 | SOD | No | Unknown | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG540W/X,115
Trans RF BJT NPN 15V 0.12A 500mW 4-Pin(3+Tab) CMPAK T/R
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NXP Semiconductors | RF BJT | NPN | Si | Single Dual Emitter | 15 | 1 | 20 | 2.5 | 0.12 | 8V/40mA | 50 to 120 | 100@40mA@8V | 2 | 500 | 0.9 | 21(Typ) | 16(Max) | 34 | 9000(Typ) | 2.4 | Tape and Reel | 4 | CMPAK | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFU520WX
Trans RF BJT NPN 16V 0.05A 450mW Automotive 3-Pin SC-70 T/R
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$0.1481
Per unità
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NXP Semiconductors | RF BJT | NPN | Si | Single | 16 | 1 | 30 | 3 | 0.05 | 8V/10mA | 50 to 120 | 60@5mA@8V | 0.64 | 450 | 0.55 | 8.5(Typ) | 24 | 18 | 10000(Typ) | 1(Min) | Tape and Reel | 3 | SC-70 | SOT | No | Yes | No | Yes | AEC-Q101 | Yes | Yes | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BF1118R,215
Trans RF FET 3V 0.01A 4-Pin(3+Tab) SOT-143R T/R
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NXP Semiconductors | RF MOSFETs | Si | Single | Depletion | 1 | 3 | 7 | 0.01 | 23.3@0V | 1 | Tape and Reel | 4 | SOT-143R | SOT | No | Yes | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLF6G10LS-135R,112
Trans RF MOSFET N-CH 65V 32A 3-Pin SOT-502B Blister
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NXP Semiconductors | RF MOSFETs | N | Single | Enhancement | 1 | 2-Carrier W-CDMA | 65 | 13 | 32 | 100(Typ)@6.15V | 700 | 26.5(Typ) | 21 | 0.14um | Blister | 3 | SOT-502B | SOT | No | No | Unknown | Unknown | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BTA216-600D,127
TRIAC 600V 150A 3-Pin(3+Tab) TO-220AB Rail
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NXP Semiconductors | TRIACs | 100 | 30(Min) | 0.5 | 1.5 | 5 | 15 | 600 | 1.5@20A | 600 | Rail | 3 | TO-220AB | TO | No | Unknown | Unknown | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFG425W
Trans RF BJT NPN 4.5V 0.03A 135mW 4-Pin(3+Tab) CMPAK
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NXP Semiconductors | RF BJT | NPN | Si | Single Dual Emitter | 4.5 | 1 | 10 | 1 | 0.03 | 2V/25mA | 50 to 120 | 50@25mA@2V | 0.575 | 135 | 0.3 | 12(Typ) | 20 | 22 | 25000(Typ) | 1.2(Typ) | 4 | CMPAK | SOT | No | Unknown | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B20,115
Diode Zener Single 20V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 20 | 2% | 5 | 0.9 | 0.05 | 55 | 60 | 500 | Tape and Reel | 2 | Mini-MELF | MELF | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BFG505,215
Trans RF BJT NPN 15V 0.018A 150mW 4-Pin(3+Tab) SOT-143B T/R
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NXP Semiconductors | RF BJT | NPN | Si | Single Dual Emitter | 15 | 1 | 20 | 2.5 | 0.018 | 50 to 120 | 60@5mA@6V | 150 | 20 | 9000(Typ) | 2.1 | Tape and Reel | 4 | SOT-143B | SOT | No | No | No | No | No | EAR99 | Yes | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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BZV55-B18,115
Diode Zener Single 18V 2% 500mW 2-Pin Mini-MELF T/R
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NXP Semiconductors | Zener | Voltage Regulator | Single | 18 | 2% | 5 | 0.9 | 0.05 | 45 | 70 | 500 | Tape and Reel | 2 | Mini-MELF | MELF | No | Yes | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFG24S100HR5 Wide Band RF Power Gan Transistor, 1-2690 MHz, 125 W CW, 50 V |
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NXP Semiconductors | RF MOSFETs | 3 | NI-360H-2SB | No | No | No | No | EAR99 | Yes | No |