Infineon Technologies AG Diodes, Transistors and Thyristors
8.154 Infineon Technologies AG Diodes, Transistors and Thyristors
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| N. parte | Prezzo | Scorte | Produttore | Categoria | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IDK02G120C5XTMA1
Diode Schottky SiC 1.2KV 11.8A 3-Pin(2+Tab) D2PAK T/R
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Scorte
162
Da $0.871 a $0.3179
Per unità
|
Infineon Technologies AG | Rectifiers | Schottky Diode | SiC | Single Dual Cathode | 1200 | 11.8 | 37 | 1.65@2A | 18 | 182(Typ) | 75000 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFS7540TRLPBF
Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) D2PAK T/R
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Scorte
485
Da $0.7313 a $1.0806
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 3.7 | 110 | 5.1@10V | 88@10V | 88 | 160000 | 4555@25V | 4.2@10V|5.4@6V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IAUT300N08S5N014ATMA1
IAUT300N08S5N014ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R - Arrow.com
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Scorte
1.930
Da $3.21 a $4.96
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Seven Source | Enhancement | 1 | 80 | ±20 | 3.8 | 300 | 1.4@10V | 144@10V | 0.5 | 144 | 300000 | 10137@40V | 1.1@10V|1.6@10V | Tape and Reel | 9 | HSOF | SO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF9Z24NPBF
Trans MOSFET P-CH Si 55V 12A 3-Pin(3+Tab) TO-220AB Tube
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Scorte
6.749
Da $0.3191 a $0.3652
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 55 | ±20 | 4 | 12 | 175@10V | 19(Max)@10V | 19(Max) | 45000 | 350@25V | HEXFET | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU9024NPBF
Trans MOSFET P-CH Si 55V 11A 3-Pin(3+Tab) IPAK Tube
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Scorte
28.654
Da $0.2933 a $0.7852
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 55 | ±20 | 4 | 11 | 175@10V | 19(Max)@10V | 110 | 3.3 | 19(Max) | 38000 | 170 | 350@25V | Tube | 3 | IPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISZ56DP15LMATMA1
Trans MOSFET P-CH 150V 1.35A 8-Pin TSDSON EP T/R
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Scorte
4.832
Da $0.3625 a $0.7882
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single Quad Drain Triple Source | Enhancement | 1 | 150 | 20 | 1.35 | 560@10V | 15.2@4.5V|30@10V | 30 | 2500 | 1100@75V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPZ60R037P7XKSA1
Trans MOSFET N-CH 600V 76A 4-Pin(4+Tab) TO-247 Tube
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Scorte
42
$3.118
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 600 | 20 | 4 | 76 | 37@10V | 121@10V | 121 | 255000 | 5243@400V | 4 | TO-247 | TO | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSZ040N04LSGATMA1
Trans MOSFET N-CH 40V 18A 8-Pin TSDSON EP T/R
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Scorte
1.880
Da $0.794 a $1.37
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±20 | 2 | 18 | 4@10V | 23@4.5V|48@10V | 48 | 2100 | 3800@20V | 3.3@10V|4.5@4.5V | Tape and Reel | 8 | TSDSON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R160C6ATMA1
Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
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Scorte
4.000
$1.6032
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 3.5 | 23.8 | 160@10V | 75@10V | 62 | 75 | 176000 | 1660@100V | 140@10V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKQB120N75CP2ALSA1
Trans IGBT Chip N-CH 750V 150A 577W 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101
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Scorte
240
$10.241
Per unità
|
Infineon Technologies AG | IGBT Chip | N | Single | ±20 | 750 | 150 | 577 | Tube | 3 | TO-247 | Yes | AEC-Q101 | Yes | Unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMW65R060M2HXKSA1
Trans MOSFET N-CH SiC 650V 32.8A Automotive 3-Pin(3+Tab) TO-247 Tube
|
Scorte
170
Da $3.295 a $4.112
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single | Enhancement | 1 | 650 | 23 | 32.8 | 73@18V | 19@18V | 130000 | 669@400V | Tube | 3 | TO-247 | TO | Unknown | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPZA60R070CM8XKSA1
Trans MOSFET N-CH 600V 37A 4-Pin(4+Tab) TO-247 Tube
|
Scorte
160
Da $2.536 a $3.497
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Dual Source | Enhancement | 1 | 600 | 20 | 37 | 70@10V | 43@10V | 43 | 201000 | 1878@400V | Tube | 4 | TO-247 | Unknown | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF1800R23IE7BPSA1
Trans IGBT Module N-CH 2300V 1.8KA 14-Pin Tray
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Scorte
1
$616.37
Per unità
|
Infineon Technologies AG | moduli IGBT | N | Dual | ±20 | 2300 | 1800 | Tray | 14 | No | No | No | No | 3A228.c | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAS3010S02LRHE6327XTSA1
Diode Schottky 1A 2-Pin TSLP T/R
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Scorte
15.000
$0.1184
Per unità
|
Infineon Technologies AG | Rectifiers | Schottky Diode | Single | 1 | 4 | 0.65 | 300 | Tape and Reel | 2 | TSLP | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IQDH29NE2LM5SCATMA1
Trans MOSFET N-CH 25V 75A 8-Pin WHSON EP T/R
|
Scorte
13
Da $1.719 a $2.535
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 25 | 16 | 75 | 0.29@10V | 88@4.5V|191@10V | 191 | 2500 | 13000@12V | 8 | WHSON EP | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
BSZ058N03LSGATMA1
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
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Scorte
5.001
$1.0872
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 2.2 | 15 | 5.8@10V | 11@4.5V|22@10V | 2.8 | 22 | 2100 | 1800@15V | Tape and Reel | 8 | TSDSON EP | SON | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA032N06N3GXKSA1
Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220FP Tube
|
Scorte
468
Da $1.6299 a $3.2133
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 84 | 3.2@10V | 124@10V | 124 | 41000 | 10000@30V | 2.6@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB60R055CFD7ATMA1
Trans MOSFET N-CH 600V 38A 3-Pin(2+Tab) D2PAK T/R
|
Scorte
410
Da $3.849 a $7.27
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4.5 | 38 | 550@10V | 79@10V | 79 | 178000 | 3194@400V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R045CPFKSA1
Trans MOSFET N-CH 650V 60A 3-Pin(3+Tab) TO-247 Tube
|
Scorte
4.148
$9.3948
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±20 | 3.5 | 60 | 45@10V | 150@10V | 62 | 150 | 431000 | 6800@100V | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IPA60R125CPXKSA1
Trans MOSFET N-CH 650V 25A 3-Pin(3+Tab) TO-220FP Tube
|
Scorte
742
$3.336
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | ±20 | 3.5 | 25 | 125@10V | 53@10V | 80 | 3.6 | 53 | 35000 | 2500@100V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD053N06NATMA1
Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) DPAK T/R
|
Scorte
38.423
Da $0.4797 a $0.1852
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 2.8(Typ) | 45 | 5.3@10V | 27@10V | 27 | 3000 | 2000@30V | 4.5@10V|6@6V | Tape and Reel | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SMBT3904PNH6327XTSA1
Trans GP BJT NPN/PNP 40V 0.2A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
|
Scorte
26.848
Da $0.0433 a $0.066
Per unità
|
Infineon Technologies AG | GP BJT | NPN|PNP | Bipolar Small Signal | Si | Dual | 40 | 2 | 40 | 6 | 0.85@1mA@10mA|0.95@5mA@50mA | 0.2 | 30 to 50|50 to 120 | 40@100uA@1V|70@1mA@1V|100@10mA@1V|60@50mA@1V|30@100mA@1V | 250 | 0.25@1mA@10mA|0.4@5mA@50mA | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRLS3036TRLPBF
Trans MOSFET N-CH Si 60V 270A 3-Pin(2+Tab) D2PAK T/R
|
Scorte
3.200
$1.4309
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±16 | 270 | 2.4@10V | 91@4.5V | 0.4 | 380000 | 11210@50V | 1.9@10V|2.2@4.5V | Tape and Reel | 3 | D2PAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRF1010ZSTRLPBF
Trans MOSFET N-CH Si 55V 94A 3-Pin(2+Tab) D2PAK T/R
|
Scorte
2.978
Da $1.17 a $2.88
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 55 | ±20 | 4 | 94 | 7.5@10V | 63@10V | 63 | 140000 | 2840@25V | 5.8@10V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS131IXUSA1
Trans MOSFET N-CH 240V 0.109A 3-Pin SOT-23 T/R
|
Scorte
3.000
Da $0.0386 a $0.3003
Per unità
|
Infineon Technologies AG | MOSFETs | Small Signal | N | Single | Enhancement | 1 | 240 | 20 | 0.109 | 14000@10V | 1.11@4.5V|1.96@10V | 1.96 | 400 | 57@120V | 3 | SOT-23 | No | No | No | EAR99 | No |