Infineon Technologies AGIPB60R160C6ATMA1MOSFETs
Trans MOSFET N-CH 600V 23.8A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 23.8 | |
| 160@10V | |
| 75@10V | |
| 75 | |
| 1660@100V | |
| 176000 | |
| 8 | |
| 13 | |
| 96 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 140@10V | |
| Mounting | Surface Mount |
| Package Height | 4.57(Max) mm |
| Package Width | 9.45(Max) mm |
| Package Length | 10.31(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
This IPB60R160C6ATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 176000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.
| EDA / CAD Models |
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