Infineon Technologies AG Diodes, Transistors and Thyristors
8.154 Infineon Technologies AG Diodes, Transistors and Thyristors
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| N. parte | Prezzo | Scorte | Produttore | Categoria | Type | Technology | Number of SCRs/Diodes | Maximum Rate of Rise of Off-State Voltage - (V/us) | Maximum Breakover Voltage - (V) | Category | Bridge Type | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Diode Type | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Peak RMS Reverse Voltage - (V) | Number of Elements per Chip | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Power Dissipation - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Power 1dB Compression - (dBm) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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T2200N16H100XPSA1
Thyristor PCT 1.6kV 3400A(RMS) 44kA 4-Pin Tray
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Scorte
2
$227.30
Per unità
|
Infineon Technologies AG | Thyristors Other | PCT | 2 | 1600 | 250 | 300 | 1.24@3000A | 3400 | 1600 | 3200 | 250 | Tray | 4 | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPW60R125CFD7XKSA1
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-247 Tube
|
Scorte
240
Da $2.1812 a $4.747
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 600 | 20 | 4.5 | 92000 | 18 | 125@10V | 36@10V | 36 | 1503@400V | 104@10V | Tube | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD92N16KOFHPSA1
SCR Module 1600V 160A(RMS) 2050A 5-Pin PB20-1 Tray
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Scorte
3
$117.00
Per unità
|
Infineon Technologies AG | SCR Modules | 1000 | 150 | 1.4 | 1600 | 120 | 200 | 1.73@300A | 160 | 1600 | 102 | 50 | 5 | PB20-1 | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF7416TRPBF
Trans MOSFET P-CH 30V 10A 8-Pin SOIC N T/R
|
Scorte
41.835
Da $0.3235 a $0.6831
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | P | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 50 | 2.04 | 2500 | 10 | 20@10V | 61@10V | 61 | 890 | 1700@25V | Tape and Reel | Unknown | 8 | SOIC N | SO | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB048N15N5LFATMA1
Trans MOSFET N-CH 150V 150A 3-Pin(2+Tab) D2PAK T/R
|
Scorte
869
Da $5.481 a $7.08
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 150 | 20 | 62 | 313000 | 150 | 4.8@10V | 84@10V | 0.4 | 84 | 290@75V | 3.9@10V | 3 | D2PAK | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F3L420R12W4H7H11BPSA1
Trans IGBT Module N-CH 1200V 420A Tray
|
Scorte
6
Da $135.82 a $144.39
Per unità
|
Infineon Technologies AG | moduli IGBT | N | Hex | ±20 | 1200 | 420 | Tray | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FS100R12KT4GBOSA1
Trans IGBT Module N-CH 1200V 100A 515W 35-Pin ECONO3-4 Tray
|
Scorte
2
$92.52
Per unità
|
Infineon Technologies AG | moduli IGBT | N | Hex | ±20 | 1200 | 100 | 515 | Tray | 35 | ECONO3-4 | No | No | No | No | No | EAR99 | Yes | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP70N04S406AKSA1
Trans MOSFET N-CH 40V 70A 3-Pin(3+Tab) TO-220 Tube Automotive AEC-Q101
|
Scorte
16.000
Da $1.2579 a $1.2706
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 58000 | 70 | 6.5@10V | 24.5@10V | 2.6 | 24.5 | 1960@25V | 5.3@10V|5.6@10V | Tube | 3 | TO-220 | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF600R17ME4BOSA1
Diode Module with Chopper-IGBT
|
Scorte
4
$297.00
Per unità
|
Infineon Technologies AG | moduli IGBT | Dual | 1700 | Tray | 11 | ECONOD-5 | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRGP6630DPBF
Trans IGBT Chip N-CH 600V 47A 192W 3-Pin(3+Tab) TO-247AC Tube
|
Scorte
8
$0.5032
Per unità
|
Infineon Technologies AG | IGBT Chip | Trench Stop | N | Single | ±20 | 600 | 47 | 192 | Tube | 3 | TO-247AC | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG120R140M1HXTMA1
Trans MOSFET N-CH SiC 1.2KV 18A 8-Pin(7+Tab) TO-263 T/R
|
Scorte
610
Da $3.0381 a $1.2832
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | SiC | N | Single Hex Source | Enhancement | 1 | 1200 | 18 | 62 | 107000 | 18 | 189@18V | 13.4@18V | 491@800V | TMOS | Tape and Reel | 8 | TO-263 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR4620TRLPBF
Trans MOSFET N-CH 200V 24A 3-Pin(2+Tab) DPAK T/R
|
Scorte
81.000
$0.7175
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 200 | ±20 | 5 | 144000 | 24 | 78@10V | 25@10V | 25 | 1710@50V | 64@10V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISCH99N04NM7VATMA1
Trans MOSFET N-CH 40V 40A T/R
|
Scorte
5.000
Da $0.7735 a $1.4675
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | 20 | 3000 | 40 | 0.9@15V | 68@10V | 68 | 4400@20V | Tape and Reel | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FS150R12N2T7B15BPSA1 Trans IGBT Module N-CH 1200V 150A 35-Pin ECONO2B Tray |
Scorte
9
Da $80.1548 a $36.82
Per unità
|
Infineon Technologies AG | moduli IGBT | Trench Stop | N | Hex | ±20 | 1200 | 150 | Tray | 35 | ECONO2B | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGLR65R200D2XUMA1
Enhancement-Mode Power GaN Transistor
|
Scorte
5.000
Da $0.8576 a $1.6057
Per unità
|
Infineon Technologies AG | MOSFETs | 8 | TSON EP | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH7914TRPBF
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
|
Scorte
78
Da $0.406 a $0.582
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 40 | 2.35 | 3100 | 15 | 8.7@10V | 8.3@4.5V | 7.2 | 220 | 1160@15V | 7.5@10V|11.2@4.5V | Tape and Reel | 8 | PQFN | QFN | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR5410TRRPBF
Trans MOSFET P-CH Si 100V 13A 3-Pin(2+Tab) DPAK T/R
|
Scorte
9.000
Da $0.4994 a $0.5088
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | P | Single | Enhancement | 1 | 100 | ±20 | 66000 | 13 | 205@10V | 58(Max)@10V | 58(Max) | 760@25V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB7530PBF
Trans MOSFET N-CH Si 60V 295A 3-Pin(3+Tab) TO-220AB Tube
|
Scorte
1.105
Da $1.3571 a $0.6206
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 3.7 | 375000 | 295 | 2@10V | 274@10V | 0.4 | 274 | 13703@25V | 1.65@10V|2.1@6V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BAR8802VH6327XTSA1
Diode PIN Switch 80V 100mA 2-Pin SC-79 T/R
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Scorte
49
Da $0.0733 a $0.108
Per unità
|
Infineon Technologies AG | PIN | Switch | UHF | Single | 80 | 100 | 0.6(Typ)@10mA | 1.2 | 2.5@1mA | 250 | 0.4@1V | 0.5 | Tape and Reel | 2 | SC-79 | No | Unknown | No | Unknown | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPC100N04S5L1R5ATMA1
Trans MOSFET N-CH 40V 100A 8-Pin TDSON EP T/R Automotive AEC-Q101
|
Scorte
4.990
$2.52
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 40 | ±16 | 50 | 2 | 115000 | 100 | 1.5@10V | 70@10V | 1.3 | 70 | 905 | 4020@25V | 1.2@10V|1.5@4.5V | Tape and Reel | 8 | TDSON EP | SON | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IGW25T120FKSA1
Trans IGBT Chip N-CH 1200V 50A 190W 3-Pin(3+Tab) TO-247 Tube
|
Scorte
238
Da $3.22 a $4.98
Per unità
|
Infineon Technologies AG | IGBT Chip | N | Single | ±20 | 1200 | 50 | 190 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFH8334TRPBF
Trans MOSFET N-CH 30V 14A 8-Pin PQFN EP T/R
|
Scorte
681
Da $0.279 a $0.438
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 30 | ±20 | 3200 | 14 | 9@10V | 7.1@4.5V|15@10V | 15 | 1180@10V | 7.2@10V|11.2@4.5V | Tape and Reel | 8 | PQFN EP | QFN | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSS606NH6327XTSA1
Trans MOSFET N-CH 60V 3.2A 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
|
Scorte
23.000
Da $0.1324 a $0.1792
Per unità
|
Infineon Technologies AG | MOSFETs | Small Signal | N | Single Dual Drain | Enhancement | 1 | 60 | ±20 | 2.3 | 1000 | 3.2 | 60@10V | 3.7@5V | 494@25V | 47@10V|66@4.5V | Tape and Reel | 4 | SOT-89 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AIKQ120N60CTXKSA1
Trans IGBT Chip N-CH 600V 160A 833W Automotive AEC-Q101 3-Pin(3+Tab) TO-247 Tube
|
Scorte
240
Da $13.00 a $17.20
Per unità
|
Infineon Technologies AG | IGBT Chip | N | Single | ±20 | 600 | 160 | 833 | Tube | 3 | TO-247 | TO | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ISC037N13NM6ATMA1
Trans MOSFET N-CH 135V 19A 8-Pin TSON EP T/R
|
Scorte
154
Da $3.01 a $4.07
Per unità
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Quad Drain Triple Source | Enhancement | 1 | 135 | 20 | 3000 | 19 | 3.5@15V | 82@10V | 82 | 5600@68V | Tape and Reel | 8 | TSON EP | No | No | No | EAR99 | Yes | Yes |