Infineon Technologies AGSPD06N60C3BTMA1MOSFET
Trans MOSFET N-CH 650V 6.2A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±20 | |
| 6.2 | |
| 750@10V | |
| 24@10V | |
| 24 | |
| 620@25V | |
| 74000 | |
| 10 | |
| 12 | |
| 52 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 680@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
As an alternative to traditional transistors, the SPD06N60C3BTMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 74000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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