Infineon Technologies AGSPD06N60C3BTMA1MOSFETs
Trans MOSFET N-CH 650V 6.2A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±20 | |
| 6.2 | |
| 750@10V | |
| 24@10V | |
| 24 | |
| 620@25V | |
| 74000 | |
| 10 | |
| 12 | |
| 52 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 680@10V | |
| Mounting | Surface Mount |
| Package Height | 2.3 mm |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
As an alternative to traditional transistors, the SPD06N60C3BTMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 74000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes coolmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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