Infineon Technologies AGSPA11N80C3XKSA1MOSFET
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±20 | |
| 3.9 | |
| -55 to 150 | |
| 11 | |
| 450@10V | |
| 64@10V | |
| 64 | |
| 1600@100V | |
| 34000 | |
| 10 | |
| 15 | |
| 72 | |
| 25 | |
| -55 | |
| 150 | |
| Tube | |
| 390@10V | |
| 20 | |
| 1.2 | |
| Installation | Through Hole |
| Hauteur du paquet | 15.99 mm |
| Largeur du paquet | 4.7 mm |
| Longueur du paquet | 10.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Compared to traditional transistors, SPA11N80C3XKSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 41000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.