Infineon Technologies AGSPA11N80C3XKSA1MOSFETs

Compared to traditional transistors, SPA11N80C3XKSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 41000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.