Infineon Technologies AGSPA11N80C3XKSA1MOSFETs
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±20 | |
| 3.9 | |
| -55 to 150 | |
| 11 | |
| 450@10V | |
| 64@10V | |
| 64 | |
| 1600@100V | |
| 34000 | |
| 10 | |
| 15 | |
| 72 | |
| 25 | |
| -55 | |
| 150 | |
| Tube | |
| 390@10V | |
| 20 | |
| 1.2 | |
| Mounting | Through Hole |
| Package Height | 15.99 mm |
| Package Width | 4.7 mm |
| Package Length | 10.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| 3 | |
| Lead Shape | Through Hole |
Compared to traditional transistors, SPA11N80C3XKSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 41000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology.
| EDA / CAD Models |
Progetta dispositivi medici guidati dall'IA
White paper: consigli su progettazione e componenti e approfondimenti IA per soluzioni diagnostiche e terapeutiche più veloci e sicure.