Infineon Technologies AG Diodes, Transistors and Thyristors
| 型号 | 价格 | 库存 | 供应商 | 类别 | Type | Technology | Number of SCRs/Diodes | Maximum Breakover Voltage - (V) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Maximum Rate of Rise of Off-State Voltage - (V/us) | Material | Frequency Band | Channel Type | Repetitive Peak Off-State Current - (mA) | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Voltage - (V) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Surge Current Rating - (A) | Peak Average Forward Current - (A) | Number of Elements per Chip | Maximum Reverse Current - (uA) | Maximum Gate Trigger Current - (mA) | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Mode of Operation | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Current - (uA) | Minimum Quality Factor | Maximum Series Resistance @ Minimum IF - (Ohm) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Gate Threshold Voltage - (V) | Peak On-State Voltage - (V) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | Typical Carrier Life Time - (us) | Repetitive Peak Forward Blocking Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Rated Average On-State Current - (A) | Maximum Junction Ambient Thermal Resistance | RMS On-State Current - (A) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Power 1dB Compression - (dBm) | Typical Power Gain - (dB) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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IPP50R399CPXKSA1
Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220AB Tube
|
库存
369
$0.9643
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 3.5 | 9 | 399@10V | 17@10V | 62 | 1.5 | 17 | 83000 | 890@100V | Tube | 3 | TO-220AB | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FF750R17ME7DB11BPSA1
Trans IGBT Module N-CH 1700V 750A 11-Pin ECONOD-3 Tray
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库存
10
$106.06
每个
|
Infineon Technologies AG | IGBT 模块 | N | Dual | ±20 | 1700 | 750 | Tray | 11 | ECONOD-3 | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB100N04S4H2ATMA1
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
|
库存
6,980
从 $0.4771 到 $0.5258
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 40 | ±20 | 4 | 100 | 2.4@10V | 70@10V | 70 | 115000 | 5520@25V | 2.1@10V|2.4@10V | Tape and Reel | 3 | D2PAK | TO | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPS65R400CEAKMA1
Trans MOSFET N-CH 650V 15.1A 3-Pin(3+Tab) TO-251 Tube
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库存
1,036
$0.4463
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 650 | 20 | 3.5 | 15.1 | 400@10V | 39@10V | 62 | 39 | 118000 | 710@100V | 360@10V | Tube | 3 | TO-251 | TO | No | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DD435N34KHPSA1
Rectifier Diode
|
库存
2
$412.00
每个
|
Infineon Technologies AG | Rectifiers | Dual Series | 3400 | Tray | 3 | PB60-1 | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
F1225R12KT4GBOSA1
Trans IGBT Module N-CH 1200V 25A 160W 38-Pin ECONO3-4 Tray
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库存
10
$94.90
每个
|
Infineon Technologies AG | IGBT 模块 | N | Array 12 | ±20 | 1200 | 25 | 160 | Tray | 38 | ECONO3-4 | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLR3802PBF
Trans MOSFET N-CH 12V 84A 3-Pin(2+Tab) DPAK Tube
|
库存
2,799
$0.4272
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 12 | ±12 | 84 | 8.5@4.5V | 27@5V | 88000 | 2490@6V | 6.5@4.5V | Tube | 3 | DPAK | TO | No | Unknown | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFI3306GPBF
Trans MOSFET N-CH 60V 71A 3-Pin(3+Tab) TO-220FP Tube
|
库存
916
从 $1.79 到 $3.03
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 60 | ±20 | 4 | 71 | 4.2@10V | 90@10V | 90 | 46000 | 4685@50V | 3.3@10V | Tube | 3 | TO-220FP | TO | No | Unknown | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPSA70R900P7SAKMA1
Trans MOSFET N-CH 700V 6A 3-Pin(3+Tab) TO-251 Tube
|
库存
500
$0.2413
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 700 | 16 | 3.5 | 6 | 900@10V | 6.8@10V | 62 | 6.8 | 30500 | 211@400V | 740@10V | Tube | 3 | TO-251 | TO | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH16G120C5XKSA1
Diode Schottky 1.2KV 40A 2-Pin(2+Tab) TO-220 Tube
|
库存
23,510
$4.997
每个
|
Infineon Technologies AG | Rectifiers | Schottky Diode | Single | 1200 | 40 | 140 | 1.95@16A | 80 | 250000 | Tube | 2 | TO-220 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSC0924NDIATMA1
Trans MOSFET N-CH 30V 17A/32A 8-Pin TISON EP T/R
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库存
7,794
从 $0.1915 到 $0.2111
每个
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Infineon Technologies AG | MOSFETs | Power MOSFET | N | Dual | Enhancement | 2 | 30 | ±20 | 2 | 17@Q1|32@Q2 | 5@10V@Q1|3.7@10V@Q2 | 6.7@4.5V@Q1|8.5@4.5V@Q2 | 2500 | 870@15V@Q1|1100@15V@Q2 | Tape and Reel | 8 | TISON EP | SON | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Top Searched
FF150R12KS4HOSA1
Trans IGBT Module N-CH 1200V 225A 1250W 7-Pin 62MM-1 Tray
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库存
7
$114.3732
每个
|
Infineon Technologies AG | IGBT 模块 | N | Dual | ±20 | 1200 | 225 | 1250 | Tray | 7 | 62MM-1 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TD500N16KOFHPSA2
Thyristor SCR Phase Control Thyristor Module 1.6kV 17kA 5-Pin Tray
|
库存
2
$220.00
每个
|
Infineon Technologies AG | SCR Modules | 200 | 1000 | 100 | 2.2 | 250 | 300 | 1.45@1700A | 900 | 5 | PB60AT-1 | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKW50N65H5FKSA1
Trans IGBT Chip N-CH 650V 80A 305W 3-Pin(3+Tab) TO-247 Tube
|
库存
230
从 $2.01 到 $4.44
每个
|
Infineon Technologies AG | IGBT 芯片 | N | Single | ±20 | 650 | 80 | 305 | Tube | 3 | TO-247 | TO | No | Unknown | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IKQ75N120CH3XKSA1
Trans IGBT Chip N-CH 1200V 150A 938W 3-Pin(3+Tab) TO-247 Tube
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库存
55
从 $7.927 到 $13.0889
每个
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Infineon Technologies AG | IGBT 芯片 | N | Single | ±20 | 1200 | 150 | 938 | 3 | TO-247 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BCM856SH6433XTMA1
Trans GP BJT PNP 65V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
|
库存
19,364
$0.063
每个
|
Infineon Technologies AG | 通用双极型晶体管 | PNP | Bipolar Small Signal | Si | Dual | 65 | 2 | 80 | 5 | 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA | 0.1 | 200 to 300 | 200@2mA@5V | 8 | 250 | 0.3@0.5mA@10mA|0.65@5mA@100mA | 3 | 10 | Tape and Reel | 6 | SOT-363 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DDB6U50N22W1RPB11BPSA1
Trans IGBT Module N-CH 1700V 40A 26-Pin Tray
|
库存
30
从 $9.235 到 $9.369
每个
|
Infineon Technologies AG | IGBT 模块 | N | Single | ±20 | 1700 | 40 | Tray | 26 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DDB2U20N12W1RFB11BPSA1
Diode Rectifier Bridge Single 1.2KV 16-Pin Tray
|
库存
22
$11.65
每个
|
Infineon Technologies AG | Bridge Rectifiers | Single | 1200 | 150 | 1.85(Typ)@20A | 58(Typ) | Tray | 16 | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6662TRPBF
Trans MOSFET N-CH Si 100V 8.3A 7-Pin Direct-FET MZ T/R
|
库存
52
从 $1.0528 到 $1.1065
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | Si | N | Single Quad Drain Dual Source | Enhancement | 1 | 100 | ±20 | 8.3 | 22@10V | 22@10V | 22 | 2800 | 1360@25V | 17.5@10V | Tape and Reel | 7 | Direct-FET MZ | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BFR380L3E6327XTMA1
Trans RF BJT NPN 6V 0.08A 380mW 3-Pin TSLP T/R Automotive AEC-Q101
|
库存
23,902
从 $0.065 到 $0.0713
每个
|
Infineon Technologies AG | 射频双极型晶体管 | NPN | Si | Single | 6 | 1 | 15 | 2 | 0.08 | 3V/40mA | 50 to 120 | 90@40mA@3V | 1 | 380 | 0.45 | 19.5(Typ) | 14 | 29.5 | 14000(Typ) | 2.1 | Tape and Reel | 3 | TSLP | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDK12G65C5XTMA2
Diode Schottky 650V 12A 3-Pin(2+Tab) D2PAK T/R
|
库存
1,000
$1.6045
每个
|
Infineon Technologies AG | Rectifiers | Schottky Diode | Single | 650 | 12 | 97 | 1.8 | 190 | 360(Typ) | 104000 | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Top Searched
BAR81WH6327XTSA1
Diode PIN Switch 30V 100mA 4-Pin(3+Tab) SOT-343 T/R
|
库存
356
从 $0.2246 到 $0.236
每个
|
Infineon Technologies AG | PIN | Switch | Single Dual Anode Dual Cathode | 30 | 100 | 1@5mA | 1 | 0.9@3V | 0.08 | 100 | Tape and Reel | 4 | SOT-343 | SOT | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IHW30N140R5LXKSA1
Trans IGBT Chip N-CH 1400V 80A 306W 3-Pin(3+Tab) TO-247 Tube
|
库存
17
$1.249
每个
|
Infineon Technologies AG | IGBT 芯片 | N | Single | ±20 | 1400 | 80 | 306 | Tube | 3 | TO-247 | TO | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IDH06SG60CXKSA2
Diode Schottky 600V 6A 2-Pin(2+Tab) TO-220 Tube
|
库存
75
从 $1.063 到 $1.2625
每个
|
Infineon Technologies AG | Rectifiers | Schottky Diode | Single | 600 | 6 | 32 | 2.3 | 50 | 130(Typ) | 71000 | Tube | 2 | TO-220 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPDQ65R080CFD7XTMA1
Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R
|
库存
70
从 $1.154 到 $1.1932
每个
|
Infineon Technologies AG | MOSFETs | Power MOSFET | N | Single Ten Source Eleven Drain | Enhancement | 1 | 650 | 20 | 36 | 80@10V | 50@10V | 50 | 223000 | 2513@400V | Tape and Reel | 22 | HDSOP EP | SO | No | No | No | EAR99 | No |