10-25% 折扣
Infineon Technologies AGIPB100N04S4H2ATMA1MOSFETs
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 4 | |
| 100 | |
| 2.4@10V | |
| 70@10V | |
| 70 | |
| 5520@25V | |
| 115000 | |
| 21 | |
| 13 | |
| 19 | |
| 18 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.1@10V|2.4@10V | |
| 400 | |
| Mounting | Surface Mount |
| Package Height | 4.4 mm |
| Package Width | 9.25 mm |
| Package Length | 10 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPB100N04S4H2ATMA1 power MOSFET. Its maximum power dissipation is 115000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。