10-25% de reduction
Infineon Technologies AGIPB100N04S4H2ATMA1MOSFET
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 4 | |
| 100 | |
| 2.4@10V | |
| 70@10V | |
| 70 | |
| 5520@25V | |
| 115000 | |
| 21 | |
| 13 | |
| 19 | |
| 18 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.1@10V|2.4@10V | |
| 400 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.4 mm |
| Largeur du paquet | 9.25 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPB100N04S4H2ATMA1 power MOSFET. Its maximum power dissipation is 115000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.