Infineon Technologies AGIPL65R130C7AUMA1MOSFET
Trans MOSFET N-CH 650V 15A 4-Pin VSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| CoolMOS | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4 | |
| 15 | |
| 100 | |
| 1 | |
| 130@10V | |
| 35@10V | |
| 35 | |
| 1670@400V | |
| 102000 | |
| 12 | |
| 5.3 | |
| 87 | |
| 11 | |
| -40 | |
| 150 | |
| Tape and Reel | |
| 115@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 8 mm |
| Longueur du paquet | 8 mm |
| Carte électronique changée | 4 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON EP |
| 4 |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPL65R130C7AUMA1 power MOSFET. Its maximum power dissipation is 102000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. This device is made with coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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