TT Electronics / Semelab Diodes, Transistors and Thyristors
332 TT Electronics / Semelab Diodes, Transistors and Thyristors
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| N. parte | Prezzo | Scorte | Produttore | Categoria | Type | Category | Material | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Number of Elements per Chip | Maximum Continuous Forward Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Maximum Base-Emitter Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Peak Reverse Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Maximum Continuous DC Collector Current - (A) | Operational Bias Conditions | Maximum Gate Threshold Voltage - (V) | Maximum Continuous Drain Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Ambient Thermal Resistance | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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2N3440
Trans GP BJT NPN 250V 1A 5000mW 3-Pin TO-39
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Scorte
3
$20.00
Per unità
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 250 | 1 | 300 | 7 | 1.3@4mA@50mA | 1 | 30 to 50 | 40@20mA@10V | 175 | 35 | 5000 | 0.5@4mA@50mA | 10(Max) | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||
| D1020UK.08 Trans RF MOSFET N-CH 70V 25A 5-Pin Case DR |
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Semelab | RF MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 25 | 389000 | 300(Max)@28V | 1 | 150 | 10(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2081UK.F Trans RF MOSFET N-CH 65V 0.2A 4-Pin(3+Tab) SOT-223 |
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Semelab | RF MOSFETs | Si | N | Single Dual Drain | Enhancement | 1 | 65 | ±20 | 0.2 | 2000 | 12(Max)@0V | 0 | 0.75 | 11(Min) | 4 | SOT-223 | SOT | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDY90 Trans GP BJT NPN 100V 10A 70000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 100 | 1 | 10 | 30 to 50 | 30@5A@5V | 70000 | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| D2241UK RF MOSFET, RF VDMOS Power |
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Semelab | RF MOSFETs | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMD1029-A Trans RF MOSFET N-CH 70V 35A 5-Pin Case D1 |
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Semelab | RF MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 7 | 35 | 438000 | 420(Max)@28V | 1 | 16(Min) | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDS19-QR-B Bipolar Pnp Device In A Hermetically Sealed Ceramic Surface Mount Package |
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Semelab | GP BJT | 3 | TO-220M | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| BDS21-QR-EB Trans GP BJT PNP 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | PNP | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N2907A-QR-B
Trans GP BJT PNP 60V 0.6A 400mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 1 | 60 | 5 | 1.3@15mA@150mA|2.6@50mA@500mA | 0.6 | 50 to 120 | 75@0.1mA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@500mA@10V | 400 | 0.4@15mA@150mA|1.6@50mA@500mA | 45 | 3 | TO-18 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||
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2N3440-JQR-B
Trans GP BJT NPN 250V 1A 5000mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 250 | 1 | 300 | 7 | 1.3@4mA@50mA | 1 | 30 to 50 | 40@20mA@10V | 175 | 35 | 5000 | 0.5@4mA@50mA | 10(Max) | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| 2N2896X Trans GP BJT NPN 90V 1A 500mW 3-Pin TO-18 |
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Semelab | GP BJT | NPN | Bipolar Small Signal | Si | Single | 90 | 1 | 140 | 7 | 1.2@15mA@150mA | 1 | 30 to 50|50 to 120 | 35@1mA@10V|60@150mA@10V | 350 | 97 | 80(Max) | 500 | 0.6@15mA@150mA | 15(Max) | 3 | TO-18 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||
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BCY71-QR-B
GENERAL PURPOSE PNP SILICON TRANSISTOR
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Semelab | GP BJT | Si | 3 | TO-18 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||
BDS20SMD
Trans GP BJT NPN 80V 5A 3-Pin SMD-1
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 80 | 1 | 80 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 35000 | 2@12mA@3A|4@20mA@5A | 3 | SMD-1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
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BFY50
Trans GP BJT NPN 35V 1A 800mW 3-Pin TO-39
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Semelab | GP BJT | NPN | Bipolar Power | Si | Single | 35 | 1 | 80 | 6 | 2@0.1A@1A | 1 | 30 to 50|2 to 30 | 15@1mA@10V|30@150mA@10V|20@10mA@10V | 2180.75 | 35 | 800 | 1@0.1A@1A|0.2@15mA@150mA | 12(Max) | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
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BFX29
Trans GP BJT PNP 60V 0.6A 600mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Small Signal | Si | Single | 60 | 1 | 60 | 5 | 0.9@1mA@30mA|1.3@15mA@150mA | 0.6 | 50 to 120|2 to 30|30 to 50 | 20@0.1mA@10V|40@1mA@10V|50@10mA@10V|50@50mA@10V|40@150mA@10V | 600 | 0.4@15mA@150mA | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
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BUY90
Trans GP BJT PNP 60V 3A 20000mW 3-Pin TO-39
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Semelab | GP BJT | PNP | Bipolar Power | Single | 60 | 1 | 3 | 30 to 50 | 40@1A@5V | 20000 | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| D1002UK Trans RF MOSFET N-CH 70V 10A 4-Pin Case DA |
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Semelab | RF MOSFETs | Si | N | Single Dual Source | Enhancement | 1 | 70 | ±20 | 10 | 87000 | 120(Max)@28V | 1 | 40 | 16(Min) | 4 | Case DA | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1007UK Trans RF MOSFET N-CH 70V 5A 5-Pin Case DK |
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Semelab | RF MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 5 | 100000 | 60(Max)@28V | 1 | 40 | 13(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1029UK Trans RF MOSFET N-CH 70V 35A 5-Pin Case DR |
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Semelab | RF MOSFETs | Si | N | Dual Common Source | Enhancement | 2 | 70 | ±20 | 35 | 438000 | 420(Max)@28V | 1 | 350 | 13(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1040UK Trans RF MOSFET 70V 35A 5-Pin Case DR |
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Semelab | RF MOSFETs | Si | Dual Common Source | 2 | 70 | ±20 | 7 | 35 | 438000 | 380(Max)@28V | 16(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| D2020UK Trans RF MOSFET 65V 2A 8-Pin SO |
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Semelab | RF MOSFETs | Si | Dual Quad Source | 2 | 65 | ±20 | 5 | 2 | 30000 | 24(Max)@0V | 1 | 5 | 13(Min) | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| IRF140 Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) TO-3 |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 100 | ±20 | 28 | 89@10V | 59(Max)@10V | 59(Max) | 125000 | 1660@25V | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
| IRFY430-QR-EB Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-257AB |
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 500 | ±20 | 4 | 4.5 | 1840@10V | 29.5(Max)@10V | 29.5(Max) | 75000 | 610@25V | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
SML0505FN
Trans MOSFET N-CH 50V 16A 3-Pin TO-39
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Semelab | MOSFETs | Power MOSFET | N | Single | Enhancement | 1 | 50 | ±20 | 4 | 16 | 50@10V | 25000 | 1500@25V | 3 | TO-39 | TO | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2210UK Trans RF MOSFET N-CH 40V 16A 3-Pin Case DP |
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Semelab | RF MOSFETs | Si | N | Single | Enhancement | 1 | 40 | ±20 | 7 | 16 | 70000 | 96(Max)@12.5V | 0 | 10(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No |