Infineon Technologies AGSPD15P10PGBTMA1MOSFET
Trans MOSFET P-CH 100V 15A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 100 | |
| ±20 | |
| 2.1 | |
| 15 | |
| 240@10V | |
| 37@10V | |
| 37 | |
| 18 | |
| 5.4 | |
| 419 | |
| 961@25V | |
| 237 | |
| 128000 | |
| 16 | |
| 23 | |
| 33 | |
| 9.5 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 160@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.41(Max) mm |
| Largeur du paquet | 6.22(Max) mm |
| Longueur du paquet | 6.73(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the SPD15P10PGBTMA1 power MOSFET. Its maximum power dissipation is 128000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with sipmos technology.
| EDA / CAD Models |
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