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Infineon Technologies AGSPD04N80C3ATMA1MOSFET
Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±20 | |
| 3.9 | |
| 4 | |
| 100 | |
| 10 | |
| 1300@10V | |
| 23@10V | |
| 23 | |
| 570@100V | |
| 63000 | |
| 12 | |
| 15 | |
| 72 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1100@10V | |
| 12 | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' SPD04N80C3ATMA1 power MOSFET is for you. Its maximum power dissipation is 63000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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