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Infineon Technologies AGSPD04N80C3ATMA1MOSFETs
Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±20 | |
| 3.9 | |
| 4 | |
| 100 | |
| 10 | |
| 1300@10V | |
| 23@10V | |
| 23 | |
| 570@100V | |
| 63000 | |
| 12 | |
| 15 | |
| 72 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1100@10V | |
| 12 | |
| Mounting | Surface Mount |
| Package Height | 2.3 mm |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' SPD04N80C3ATMA1 power MOSFET is for you. Its maximum power dissipation is 63000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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