| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±6 | |
| 0.485 | |
| 700@4.5V | |
| 0.75@4.5V | |
| 250 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.6(Max) mm |
| Largeur du paquet | 1.2 mm |
| Longueur du paquet | 1.7(Max) mm |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | SC-89 |
| 6 |
Make an effective common source amplifier using this SI1024X-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
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