| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±6 | |
| 0.485 | |
| 700@4.5V | |
| 0.75@4.5V | |
| 250 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.6(Max) mm |
| Package Width | 1.2 mm |
| Package Length | 1.7(Max) mm |
| PCB changed | 6 |
| Supplier Package | SC-89 |
| 6 |
Make an effective common source amplifier using this SI1024X-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。