| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 26 | |
| 230@10V | |
| 65@10V | |
| 65 | |
| 3600@25V | |
| 400000 | |
| 20 | |
| 25 | |
| 58 | |
| 20 | |
| -55 | |
| 150 | |
| Installation | Through Hole |
| Largeur du paquet | 4.9(Max) |
| Longueur du paquet | 15.8(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3P |
| 3 | |
| Forme de sonde | Through Hole |
Increase the current or voltage in your circuit with this IXTQ26N50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 400000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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