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IXTQ26N50P|IXYS|simage
IXTQ26N50P|IXYS|limage
MOSFETs

IXTQ26N50P

Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-3P

IXYS
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    500
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Continuous Drain Current (A)
    26
  • Maximum Drain-Source Resistance (mOhm)
    230@10V
  • Typical Gate Charge @ Vgs (nC)
    65@10V
  • Typical Gate Charge @ 10V (nC)
    65
  • Typical Input Capacitance @ Vds (pF)
    3600@25V
  • Maximum Power Dissipation (mW)
    400000
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    25
  • Typical Turn-Off Delay Time (ns)
    58
  • Typical Turn-On Delay Time (ns)
    20
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Through Hole
  • Package Width
    4.9(Max)
  • Package Length
    15.8(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-3P
  • Pin Count
    3
  • Lead Shape
    Through Hole

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Documentation and Resources

Datasheets
Design resources