| Compliant with Exemption | |
| EAR99 | |
| Active | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 26 | |
| 230@10V | |
| 65@10V | |
| 65 | |
| 3600@25V | |
| 400000 | |
| 20 | |
| 25 | |
| 58 | |
| 20 | |
| -55 | |
| 150 | |
| Mounting | Through Hole |
| Package Width | 4.9(Max) |
| Package Length | 15.8(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-3P |
| 3 | |
| Lead Shape | Through Hole |
Increase the current or voltage in your circuit with this IXTQ26N50P power MOSFET from Ixys Corporation. Its maximum power dissipation is 400000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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