50-75% de réduction
Infineon Technologies AGIPW65R095C7XKSA1MOSFET
Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4 | |
| 24 | |
| 100 | |
| 1 | |
| 95@10V | |
| 45@10V | |
| 45 | |
| 2140@400V | |
| 128000 | |
| 7 | |
| 12 | |
| 60 | |
| 14 | |
| -55 | |
| 150 | |
| Tube | |
| 84@10V | |
| 100 | |
| Installation | Through Hole |
| Hauteur du paquet | 20.95 mm |
| Largeur du paquet | 5.03 mm |
| Longueur du paquet | 15.9 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
As an alternative to traditional transistors, the IPW65R095C7XKSA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 128000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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