Infineon Technologies AGIPW65R080CFDFKSA1MOSFET
Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| IPW65R080CFDFKSA1 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 20 | |
| 4.5 | |
| 43.3 | |
| 80@10V | |
| 167@10V | |
| 167 | |
| 5030@100V | |
| 391000 | |
| 6 | |
| 18 | |
| 85 | |
| 20 | |
| -55 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 20.9 |
| Largeur du paquet | 5.03 |
| Longueur du paquet | 15.9 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The IPW65R080CFDFKSA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 391000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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