MOSFETs

IPW65R080CFDFKSA1

Trans MOSFET N-CH 650V 43.3A 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  IPW65R080CFDFKSA1

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  4.5

• Maximum Continuous Drain Current (A)

  43.3

• Maximum Drain-Source Resistance (mOhm)

  80@10V

• Typical Gate Charge @ Vgs (nC)

  167@10V

• Typical Gate Charge @ 10V (nC)

  167

• Typical Input Capacitance @ Vds (pF)

  5030@100V

• Maximum Power Dissipation (mW)

  391000

• Typical Fall Time (ns)

  6

• Typical Rise Time (ns)

  18

• Typical Turn-Off Delay Time (ns)

  85

• Typical Turn-On Delay Time (ns)

  20

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  20.9 mm

• Package Width

  5.03 mm

• Package Length

  15.9 mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3

• Lead Shape

  Through Hole