Infineon Technologies AGIPP80N03S4L03AKSA1MOSFET
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±16 | |
| 2.2 | |
| 80 | |
| 2.7@10V | |
| 110@10V | |
| 110 | |
| 7500@25V | |
| 136000 | |
| 13 | |
| 9 | |
| 62 | |
| 14 | |
| -55 | |
| 175 | |
| Tube | |
| 2@10V|2.3@10V|2.5@4.5V|2.8@4.5V | |
| Installation | Through Hole |
| Hauteur du paquet | 9.25 mm |
| Largeur du paquet | 4.4 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Compared to traditional transistors, IPP80N03S4L03AKSA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 136000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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