Infineon Technologies AGIPP055N03LGXKSA1MOSFET
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 50 | |
| 5.5@10V | |
| 31@10V | |
| 31 | |
| 2400@15V | |
| 68000 | |
| 4 | |
| 5.2 | |
| 25 | |
| 6.7 | |
| -55 | |
| 175 | |
| Tube | |
| 4.6@10V|6.2@4.5V | |
| 200 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.45(Max) mm |
| Largeur du paquet | 4.57(Max) mm |
| Longueur du paquet | 10.36(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Amplify electronic signals and switch between them with the help of Infineon Technologies' IPP055N03LGXKSA1 power MOSFET. Its maximum power dissipation is 68000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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