Infineon Technologies AGIPG16N10S461ATMA1MOSFET
Trans MOSFET N-CH 100V 16A 8-Pin TDSON EP T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 16 | |
| 100 | |
| 1 | |
| 61@10V | |
| 5.4@10V | |
| 5.4 | |
| 374@25V | |
| 29000 | |
| 5 | |
| 1 | |
| 5 | |
| 3 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 53@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Create an effective common drain amplifier using this IPG16N10S461ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 29000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.