Infineon Technologies AGIPG16N10S461ATMA1MOSFETs
Trans MOSFET N-CH 100V 16A 8-Pin TDSON EP T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Índice de SEP por encima del límite autorizado | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 100 | |
| ±20 | |
| 3.5 | |
| 16 | |
| 100 | |
| 1 | |
| 61@10V | |
| 5.4@10V | |
| 5.4 | |
| 374@25V | |
| 29000 | |
| 5 | |
| 1 | |
| 5 | |
| 3 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 53@10V | |
| Mounting | Surface Mount |
| Package Height | 1 mm |
| Package Width | 5.9 mm |
| Package Length | 5.15 mm |
| PCB changed | 8 |
| Standard Package Name | SON |
| Supplier Package | TDSON EP |
| 8 | |
| Lead Shape | No Lead |
Create an effective common drain amplifier using this IPG16N10S461ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 29000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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