Infineon Technologies AGIPD90N04S4L04ATMA1MOSFET
Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| 20 | |
| 2.2 | |
| 90 | |
| 100 | |
| 1 | |
| 3.8@10V | |
| 46@10V | |
| 46 | |
| 3610@25V | |
| 71000 | |
| 28 | |
| 11 | |
| 22 | |
| 7 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 3.2@10V|4.6@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IPD90N04S4L04ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 71000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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