Infineon Technologies AGIPD90N04S4L04ATMA1MOSFETs
Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| 20 | |
| 2.2 | |
| 90 | |
| 100 | |
| 1 | |
| 3.8@10V | |
| 46@10V | |
| 46 | |
| 3610@25V | |
| 71000 | |
| 28 | |
| 11 | |
| 22 | |
| 7 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 3.2@10V|4.6@4.5V | |
| Mounting | Surface Mount |
| Package Height | 2.3 mm |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IPD90N04S4L04ATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 71000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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