Infineon Technologies AGIPD400N06NGBTMA1MOSFET
Trans MOSFET N-CH 60V 27A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 27 | |
| 40@10V | |
| 13@10V | |
| 13 | |
| 490@30V | |
| 68000 | |
| 23 | |
| 24 | |
| 24 | |
| 9 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Increase the current or voltage in your circuit with this IPD400N06NGBTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 68000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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