Infineon Technologies AGIPD350N06LGBTMA1MOSFET
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2 | |
| 29 | |
| 35@10V | |
| 10@5V | |
| 600@30V | |
| 68000 | |
| 20 | |
| 21 | |
| 29 | |
| 6 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 6.22 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IPD350N06LGBTMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 68000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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