Infineon Technologies AGIPD350N06LGBTMA1MOSFETs
Trans MOSFET N-CH 60V 29A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2 | |
| 29 | |
| 35@10V | |
| 10@5V | |
| 600@30V | |
| 68000 | |
| 20 | |
| 21 | |
| 29 | |
| 6 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 2.3 mm |
| Package Width | 6.22 mm |
| Package Length | 6.5 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DPAK |
| 3 |
Looking for a component that can both amplify and switch between signals within your circuit? The IPD350N06LGBTMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 68000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.
| EDA / CAD Models |
Design AI-powered medical devices
Explore system design tips, part recs and AI insights to help you build faster, safer diagnostic and therapy solutions—all in Arrow’s latest white paper.