Infineon Technologies AGIPB60R280C6ATMA1MOSFET
Trans MOSFET N-CH 600V 13.8A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 13.8 | |
| 280@10V | |
| 43@10V | |
| 43 | |
| 950@100V | |
| 104000 | |
| 12 | |
| 11 | |
| 100 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 250@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.4 mm |
| Largeur du paquet | 9.25 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common source amplifier using this IPB60R280C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 104000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes coolmos technology.
| EDA / CAD Models |
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