Infineon Technologies AGIPB60R125C6ATMA1MOSFET
IPB60R125C6ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 600V 30A 3-Pin(2+Tab) D2PAK T/R - Arrow.com
| Compliant with Exemption | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| CoolMOS | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 3.5 | |
| 30 | |
| 125@10V | |
| 96@10V | |
| 96 | |
| 2127@100V | |
| 219000 | |
| 7 | |
| 12 | |
| 83 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 110@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.57(Max) mm |
| Largeur du paquet | 9.45(Max) mm |
| Longueur du paquet | 10.31(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this IPB60R125C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 219000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.